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采用磁过滤真空直流阴极弧蒸发工艺在石英基底上沉积N掺杂Ti薄膜,随后将其在马弗炉中以不同的退火温度(100~700℃)热处理制备N掺杂TiO_2薄膜,采用X线衍射仪(XRD)、拉曼光谱仪(Raman)、X线光电子能谱(XPS)和扫描电子显微镜(SEM)分析表征。结果表明:初始态N掺杂Ti薄膜为包含少量TiN相的Ti薄膜,在300℃退火处理时,N掺杂Ti薄膜直接氧化生成N掺杂金红石相TiO_2薄膜。初始态的N掺杂Ti薄膜表面平整、颗粒细密,与基底附着牢固,经700℃退火处理后,TiO_2颗粒得到了良好的结晶生长,薄膜厚度增加了60%。当热处理温度为600℃时,N掺杂TiO_2复合膜中替代型N开始转变为填隙型N,由于填隙型N具有更高的能级,这种N位置的转变进一步窄化了N掺杂TiO_2的能带宽度,提高了对可见光的利用率。
An N-doped Ti film was deposited on a quartz substrate by a magnetic filtration vacuum DC cathodic arc evaporation process. Subsequently, an N-doped TiO 2 thin film was prepared by heat treatment in a muffle furnace at different annealing temperatures (100 ~ 700 ℃) XRD, Raman, XPS and SEM. The results show that the initial N-doped Ti film is a Ti film containing a small amount of TiN. When annealed at 300 ℃, the N-doped Ti film is directly oxidized to form the N-doped rutile TiO 2 film. The initial state of the N-doped Ti film surface smooth, fine particles, and the substrate adhesion firm, annealed at 700 ℃, the TiO 2 particles obtained good crystal growth, the film thickness increased by 60%. When the heat treatment temperature was 600 ℃, the substitutional N in the N-doped TiO_2 composite film began to change into the interstitial N, which was further narrowed due to the higher energy level of the interstitial N The band gap of TiO_2 increases the utilization of visible light.