A very large magnetoresistive effect in both homoepitaxial and heteroepitaxial semiconducting diamond films by chemical vapor deposition has been observed. The changes in the resistance of the films strongly depend on both magnetic field intensity and geometric form of the samples. The effect of disk structure is greater than that of stripe type samples, also variation in the resistance of homoepitaxial diamond films is greater than that of eteroepitaxial diamond films. The resistance of homoepitaxial diamond films with the disk structure is increased y a factor of 2.1 at room temperature under magnetic field intensity of 5 T, but only 0.80 for heteroepitaxial diamond films.