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采用V和SiO2靶通过反应溅射方法制备了一系列具有不同SiO2和VN调制层厚的VN/SiO2纳米多层膜.利用X射线衍射、X射线能量色散谱、高分辨电子显微镜和微力学探针表征了多层膜的微结构和力学性能.结果表明:在Ar,N2混和气体中,射频反应溅射的SiO2薄膜不会渗氮.单层膜时以非晶态存在的SiO2,当其厚度小于1nm时,在多层膜中因VN晶体层的模板效应被强制晶化,并与VN层形成共格外延生长.相应地,多层膜的硬度得到明显提高,最高硬度达34GPa.随SiO2层厚度的进一步增加,SiO2层逐渐转变为非晶态,破坏了与VN层的共格外延生长结构,多层膜硬度也随之降低.VN调制层的改变对多层膜的生长结构和力学性能也有影响,但并不明显.
A series of VN / SiO2 multilayers with different SiO2 and VN modulation thickness were prepared by reactive sputtering method using V and SiO2 targets. X-ray diffraction, energy dispersive X-ray spectroscopy, high resolution electron microscopy and micro-mechanics The microstructure and mechanical properties of the multilayered films were characterized by X-ray diffraction and XRD.The results show that the radio frequency reactively sputtered SiO2 films do not nitriding in Ar and N2 mixed gases, When the thickness is less than 1 nm, the multi-layer film is forcibly crystallized due to the template effect of the VN crystal layer and forms a coextensive epitaxial growth with the VN layer. Accordingly, the hardness of the multi-layer film is obviously increased, with a maximum hardness of 34 GPa The thickness of SiO2 layer is further increased, the SiO2 layer is gradually transformed into amorphous state, the coherent epitaxial growth structure with the VN layer is destroyed, and the hardness of the multilayer film is also decreased .VN modulation layer changes the growth structure and Mechanical properties also have an effect, but not obvious.