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通过脉冲激光沉积(PLD)方法,在O2中和100～500℃衬底温度下,用粉末靶在Si(111)衬底上制备了ZnO薄膜,在300℃温度下生长的薄膜在400～800℃温度和N2氛围中进行了退火处理,用X射线衍射(XRD)谱、原子力显微镜(AFM)和光致发光(PL)谱表征薄膜的结构和光学特性。XRD谱显示,在生长温度300℃时获得较好的复晶薄膜,在退火温度700℃时获得最好的六方结构的结晶薄膜;AFM显示,在此退火条件下,薄膜表面平整、晶粒均匀;PL谱结果显示,在700℃退火时有最好的光学特性。
ZnO thin films were prepared by pulsed laser deposition (PLD) on a Si (111) substrate under O2 neutralization at a substrate temperature of 100 ~ 500 ℃. Films grown at 300 ℃ were sintered at 400 ~ 800 The structure and optical properties of the films were characterized by X-ray diffraction (XRD), atomic force microscopy (AFM) and photoluminescence (PL) spectra. XRD patterns show that the best recrystallized film is obtained at the growth temperature of 300 ℃ and the best hexagonal crystal structure is obtained at the annealing temperature of 700 ℃. AFM shows that the surface of the film is smooth and the grains are uniform ; PL spectra showed the best optical properties when annealed at 700 ° C.