利用MOCVD技术在蓝宝石衬底上外延生长了具有低温插入层结构的绿光LED,研究了具有插入层结构的LED的发光特性。插入层的引入增加了In在量子阱中的并入,并且引起了波长红移。经过分析,认为是In的相分离和极化场带来的红移,且恶化了器件的性能。 The MOCVD technique was used to epitaxially grow a green LED with a low temperature insertion layer structure on a sapphire substrate. The luminescence properties of the LED with the insertion layer structure were investigated. The insertion of the insertion layer increases the incorporation of In into the quantum well and causes a wavelength red shift. After analysis, it is considered that the phase separation of In and the red shift caused by the polarization field, and deteriorate the performance of the device.