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利用射频磁控溅射法分别溅射ZnO中间层和Ga2O3薄膜到Si(111)衬底上,然后ZnO/Ga2O3薄膜在管式石英炉中常压下通氨气进行氨化,高温下ZnO在氨气气氛中被还原生成Zn而升华,而在不同的氨化时间下Ga2O3和氨气反应合成出GaN纳米棒和纳米颗粒。X射线衍射(XRD)测量结果表明,利用该方法制备GaN纳米棒和颗粒具有沿c轴择优取向生长的六方纤锌矿结构。利用扫描电子显微镜(SEM)、透射电子显微镜(TEM)、傅里叶红外透射谱(FTIR)及选区电子衍射(SAED)观测和分析了样品的形貌、成分和晶格结构。研究分析了此种方法合成GaN纳米结构的反应机制。
ZnO intermediate layer and Ga2O3 thin film were sputtered respectively on Si (111) substrate by RF magnetron sputtering. Then ZnO / Ga2O3 thin film was ammoniated by ammonia gas at atmospheric pressure in tubular quartz furnace. ZnO Ammonia was reduced to generate Zn and sublimation, and at different ammoniation time Ga2O3 and ammonia gas reaction to synthesize GaN nanorods and nano-particles. X-ray diffraction (XRD) measurement results show that the hexagonal wurtzite structure with the preferred orientation of growth along the c-axis is obtained by the method. The morphology, composition and lattice structure of the samples were observed and analyzed by scanning electron microscopy (SEM), transmission electron microscopy (TEM), Fourier transform infrared spectroscopy (FTIR) and selected area electron diffraction (SAED). The reaction mechanism of this method for synthesizing GaN nanostructures was studied.