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采用热丝和射频等离子体复合化学气相沉积设备(PE-HF-CVD),以CH4、H2和N2为反应气体,在较低衬底温度下(500℃),用简单的催化剂制备方法——旋涂法在硅片上涂覆Ni(NO3)2溶液,经热处理及H2还原后的Ni颗粒为催化剂,在硅衬底上制备出了垂直于硅片且定向生长的碳纳米管薄膜。扫描电子显微镜(SEM)和透射电子显微镜(TEM)结果显示,1 mol/l的硝酸镍溶液旋涂硅片所得催化剂制得的碳纳米管管径为30~50 nm,长度超过4μm,定向性好,并用拉曼光谱(Raman)对不同摩尔浓度Ni(NO3)2溶液条件下制备的碳纳米管薄膜样品进行了表征。
Using hot filament and RF plasma chemical vapor deposition equipment (PE-HF-CVD), CH4, H2 and N2 as reaction gases at a low substrate temperature (500 ℃), using a simple catalyst preparation method - The spin coating method was used to coat Ni (NO3) 2 solution on silicon wafer. After heat treatment and H2 reduction, Ni particles were used as catalyst to prepare carbon nanotube films perpendicular to the silicon wafer and grown on silicon substrate. Scanning electron microscopy (SEM) and transmission electron microscopy (TEM) results show that 1 mol / l nickel nitrate solution obtained by spin-coating the silicon carbide catalyst obtained nanotubes diameter of 30 ~ 50 nm, the length of more than 4μm, the orientation Good, and Raman spectra of different molar concentrations of Ni (NO3) 2 solution prepared under the conditions of the carbon nanotube film samples were characterized.