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通过对AlGaN/GaNHEMT器件直流扫描情况下电流崩塌现象和机理的分析,建立了一个AlGaN/GaNHEMT器件的直流扫描电流崩塌模型.该模型从AlGaN/GaN器件工作机理出发,综合考虑了器件结构、半导体表面与界面,以及量子阱特殊结构对电流崩塌的影响.实验反复证明了该模型与实验结果有良好的一致性.
A direct current sweep current collapse model for AlGaN / GaNHEMT devices is established by analyzing the current collapse phenomenon and the mechanism under the condition of DC scanning of AlGaN / GaNHEMT devices. The model starts from the working mechanism of AlGaN / GaN devices, and takes the device structure, Surface and interface, as well as the special structure of quantum well on the current collapse.Experiments have repeatedly proved that the model is in good agreement with the experimental results.