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提出一种可在宽电源电压范围下工作的带隙基准源设计.由于采用了一些新的结构,使得其电源抑制比和温度稳定性有明显提高.为支持电源管理芯片的休眠工作模式以降低待机功耗,电路中专门设置了一个辅助的微功耗基准,在正常模式下为电路提供偏置,在休眠模式中替代主基准以节省功耗.仿真结果表明,该基准源提供的1.27V基准电压在-20至120℃范围内的最大温漂为3.5mV.当供电电压由3V变化至40V时,基准电压的变化为56μV.在低于10kHz的频率范围内基准源具有大于100dB的电源抑制比.芯片采用1.5μm BCD(Bipolar-CMOS-DMOS)工艺设计与实现.实验结果证实上述设计目标已基本实现.
A bandgap reference design that can operate over a wide range of supply voltages is proposed. Due to the new structure, the power supply rejection ratio and temperature stability have been significantly improved. To support the sleep mode of the power management chip to reduce Standby power consumption, the circuit specifically set up an auxiliary micro-power benchmarks in the normal mode bias circuit to replace the main reference in sleep mode to save power.The simulation results show that the reference source provides 1.27V The reference voltage has a maximum temperature drift of 3.5mV over a range of -20 to 120 ° C. The reference voltage variation is 56μV when the supply voltage changes from 3V to 40 V. The reference source has a power supply of more than 100 dB in the frequency range below 10 kHz Rejection ratio.The design and implementation of the chip using a Bipolar-CMOS-DMOS (1.5μm) process.The experimental results confirm that the above design goals have been basically achieved.