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  5. ,The reliability of AlGaN/GaN high electron mobilitytransistors under step-electrical stresses

,The reliability of AlGaN/GaN high electron mobilitytransistors under step-electrical stresses

来源 :中国物理B（英文版） | 被引量 : 0次 | 上传用户：wy83902
【作 者】
：
Ma Xiao-Hua Jiao Ying Ma Ping He Qiang Ma Ji-Gang Zhang Kai Zhang Hui-Long Zhang Jin-Cheng Hao Yue 
【机 构】
：
School of Technical Physics, Xidian University, Xi’an 710071, China“,”Key Laboratory for Wide Band-G
【出 处】
：
中国物理B（英文版）
【发表日期】
：
2011年12期
【关键词】
：
inverse piezoelectric effects degradation mechanisms hot electron effects DC ele 
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