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研究了γ辐照感生Ｓｉ／ＳｉＯ２慢界面态的特性及其对高频Ｃ－Ｖ测试的影响．结果表明，辐照产生的慢界面态为界面态的０．３—０．８，分布在Ｓｉ禁带中央以上的能级或呈现受主型．分析认为慢界面态对应的的微观缺陷很可能是Ｓｉ—Ｏ断键或弱键．慢界面态的产生还引起Ｃ－Ｖ曲线同测试速率、方向和扫描前保持时间有关．文中提出了如何通过高频Ｃ－Ｖ测量比较准确地计算辐照感生氧化物正电荷、界面态和慢界面态密度的方法．
The properties of γ-induced Si / SiO2 slow interface state and its effect on high-frequency C-V testing were studied. The results show that the slow interface states of the irradiation are 0.3-0.8 in the interface state, which are distributed at the energy level above the center of the Si band gap or appear as acceptor. It is considered that the microscopic defects corresponding to slow interface states are probably Si-O bond or weak bond. The slow interface state also causes the C-V curve to be related to the test rate, orientation, and hold time before scanning. In this paper, how to calculate the positive charge, the interface state and the slow interface state density of irradiated-induced oxide accurately by high-frequency C-V measurement is proposed in this paper.