【摘 要】
：
GaN-based semiconductors are very attractive for fabricating highly sensitive ultraviolet (UV) photodetectors (PDs) owing to their wide direct bandgap,excellent
【机 构】
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Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, and School of Elect
论文部分内容阅读
GaN-based semiconductors are very attractive for fabricating highly sensitive ultraviolet (UV) photodetectors (PDs) owing to their wide direct bandgap,excellent physical and chemical stability,and increasingly improved material growth/processing technologies.These PDs have wide applications in the fields of flame detection,environmental monitoring,chemical/biological agent sensing,and UV astronomy.[1] Over the last few years,various types of GaN-based PDs have been demonstrated with promising performance including photoconductors,[2]metal-semiconductor-metal PDs,[3,4] Schottky barrier PDs,[5,6] and p i-n PDs.[7-9] Among these structures,p-i-n PDs draw particular interest for their advantages of low dark current,relatively high speed,and high stability.
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