据新华社日前报道,上海硅酸盐研究所20余台具有自主知识产权的碳化硅晶体生产炉已成功稳定生产高质量碳化硅晶体。据碳化硅晶体项目部晶体生长组组长严成锋介绍,自主研制新一代中用晶体炉可以打破发达国家技术垄断,大大提升中国第三代半导体核心材料的自主研发生产能力。 According to Xinhua News Agency recently reported that the Shanghai Institute of Silicate more than 20 units with independent intellectual property rights of silicon carbide crystal furnace production has been successful and stable production of high-quality silicon carbide crystals. According to Yan Chengfeng, director of the Crystal Growth Group of Silicon Carbide Crystal Project Department, the independent research and development of a new generation of crystal furnaces can break the monopoly of technology in developed countries and greatly enhance the independent R & D and production capacity of China’s third-generation semiconductor core materials.