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基于ＡＦＭ电场诱导的方法成功地在硅掺杂ｎ＋型ＧａＡｓ（１００）和锌掺杂ｐ型ＧａＡｓ（１００）表面局域氧化制备了纳米尺度的点、线、图形，最小的纳米结构约１５ｎｍ，并定性地考察了ＧａＡｓ表面ＡＦＭ电场诱导制备纳米结构的一些规律。
Nanoscale dots, lines and patterns were successfully prepared on the surface of silicon-doped n + -type GaAs (100) and zinc-doped p-type GaAs (100) based on AFM electric field induction. The smallest nanostructures were about 15 nm, And qualitatively investigated some of the rules induced by AFM electric field induced nanostructures on the surface of GaAs.