通常由饱和区的霍耳系数和电阻率计算P型HgCdTe样品的空穴浓度和迁移率: R=3π/8·1/ep, (1) σ=peμ_(ho) (2)对在液氮温度下工作的元件来说,77K的电学参数是很重要的。但是,在这一温度,有的样品还没有达到饱和,而是处于混合导电区,公式(1)、(2)不适用。弱场下的霍耳系数用R_0表示,零磁场下的电导率用σ表示,由一般的霍耳与电阻率测量,有 The hole concentration and mobility of a P-type HgCdTe sample are usually calculated from the Hall coefficient and the resistivity of the saturation region: R = 3π / 8 · 1 / ep, (1) σ = peμ_ The electrical parameters of the 77K are important for the operating temperature components. However, at this temperature, some samples have not yet reached saturation, but in the mixed conductive zone, the formula (1), (2) does not apply. The Hall coefficient in the weak field is denoted by R_0 and the conductivity in zero magnetic field is denoted by σ. Measured by the general Hall and resistivity, there is