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针对镁光公司的4种NAND型Flash存储器,开展了不同辐照偏置下的总剂量效应实验及不同工艺尺寸器件的静态加电辐照实验。实验结果表明,器件在静态加电和动态辐照偏置下的总剂量效应相似,而与不加电辐照偏置下的总剂量效应不同。不同工艺尺寸器件的敏感参数有相同的变化趋势,由于受其他因素的综合影响,各敏感参数并不随工艺尺寸单调变化。
For the four kinds of NAND flash memory of Micron, the total dose effect experiment under different irradiation bias and the static power-on irradiation experiment of different process size devices are carried out. The experimental results show that the total dose effects of the device under static power-on and dynamic-radiation bias are similar, but different from the total dose under un-charged radiation bias. Sensitive parameters of different process size devices have the same trend. Due to the combination of other factors, the sensitive parameters do not vary monotonically with the process size.