平面薄膜是ICF分解实验的重要靶型 .以半导体技术结合重掺杂自截止腐蚀制备厚度为 3— 4μm的Si平面薄膜 ,以热蒸发结合脱膜工艺制备Al平面薄膜 ,两者的表面粗糙度分别为 30nm和 10nm左右 ;进一步采用离子束刻蚀在平面薄膜的表面引入网格或条状图形 ,获得测量成像系统像传递函数的刻蚀膜 ,控制离子束刻蚀工艺的参数以实现图形的精确转移 The planar thin film is an important target for ICF decomposition experiments.An Si planar film with a thickness of 3 ~ 4μm was prepared by semiconductor technology combined with heavy doping from the cut-off etching, and the Al planar film was prepared by thermal evaporation combined with the stripping process, the surface roughness Which are respectively about 30nm and 10nm. Further, ion beam etching is used to introduce a grid or strip pattern on the surface of the planar film to obtain an etching film for measuring the image transfer function of the imaging system and control the parameters of the ion beam etching process for realizing the pattern Precise transfer