基于硅的高深宽比微细结构是先进微器件的关键结构之一,在其加工工艺中,具有高选择比的掩蔽层材料是该结构实现的重要保证。研究了在感应耦合等离子体刻蚀过程中射频功率和气体流量对不同材料刻蚀性能的影响,获得了在SF6等离子体中Si,SiO2,MgO以及Al等材料的刻蚀速率,同时获得了在该等离子体中Si相对SiO2,MgO以及Al的选择比。通过比较研究,得到了硅深刻蚀中最佳的掩蔽层材料及刻蚀工艺参数。 Silicon-based high aspect ratio microstructures are one of the key structures of advanced microdevices. In their processing technology, the masking layer material with high selectivity is an important guarantee for the realization of this structure. The influence of RF power and gas flow rate on the etching performance of different materials during inductively coupled plasma etching was studied. The etching rates of Si, SiO2, MgO and Al in SF6 plasma were obtained. At the same time, The selectivity of Si to SiO2, MgO and Al in the plasma. Through comparative study, the best masking material and etching process parameters were obtained.