采用化学溶液沉积制备YBCO薄膜,研究了氧分压对YBCO超导层a轴晶生长的影响.研究发现氧分压是YBCO薄膜a轴晶形成的关键因素.当氧分压改变,YBCO生长模式由c轴生长转变为过渡到a(b)-c混合生长模式.低氧分压可以促进YBCO的c轴生长.高氧分压影响YBCO超导层的微观结构,促使YBCO的织构取向变差,最终导致YBCO超导层的性能降低. YBCO thin films were prepared by chemical solution deposition and the effect of oxygen partial pressure on the growth of a-axis YBCO superconductor layers was investigated. It was found that the oxygen partial pressure was the key factor for the formation of a-axis YBCO films.When the oxygen partial pressure changed, YBCO growth mode From c-axis growth to transition to a (b) -c mixed growth mode.The hypoxic partial pressure can promote the c-axis growth of YBCO.The high oxygen partial pressure affects the microstructure of YBCO superconducting layer, Poor, eventually leading to lower YBCO superconducting layer performance.