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本文分析了浅槽隔离(STI)结构辐射诱导电荷的分布情况,给出一种模拟超深亚微米器件总剂量辐射效应的新方法.研究结果表明,如果在栅附近沿着STI侧墙不加辐照缺陷,仿真出的0.18μm超深亚微米晶体管亚阈区I-V特性没有反常的隆起,并且能够很好地反映试验结果.在研究总剂量辐照特性改善方面,在剂量不是很大的情况下,采用超陡倒掺杂相对于均匀掺杂能有效地减小辐照所引起的泄漏电流.如果采用峰值(Halo)掺杂,不仅有利于提高超深亚微米器件的抗辐照能力,而且在大剂量的情况下,可以得到明显的效果.
In this paper, the distribution of radiation-induced charges in shallow trench isolation (STI) structures is analyzed and a new method to simulate the total dose radiation effect of ultra-deep submicron devices is presented. The results show that if the STI sidewalls are not adjacent to the gate Irradiation defect, simulated sub-micron 0.18μm sub-submicron sub-threshold IV characteristics of the transistor there is no abnormal uplift, and can well reflect the test results.In studying the improvement of the total dose radiation characteristics, the dose is not very large , The ultra-steep doping can reduce the leakage current caused by irradiation compared with the uniform doping.It is not only beneficial to improve the anti-radiation ability of ultra-deep sub-micron devices, And in the case of high doses, you can get significant results.