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采用相同生长结构的 MOCVD外延片 ,研究制备适用于单片集成的垂直腔面发射与接收器件及列阵 ,发射及接收波长相同 ,由谐振腔模式决定 .采用双氧化电流限制结构 ,优化串联电阻 ,提高电光转换效率 ,制备 980 nm波段发光器件及 1× 16列阵芯片 ,发射谱线半宽≤ 4 .8nm,注入电流为 5 0 m A时 ,发射功率为 0 .7m W.对列阵芯片用探针进行在线检测 ,器件均有良好的发光特性 .接收器件光电响应具有良好的波长和空间选择特性 ,谐振接收波长可利用不同角度光入射实现简单易行的调节 .通过腐蚀器件顶部 DBR的方法调节入射镜反射率 ,可以分别实现具有单片集成结构的谐振增强型发射和接收器件的优化设计 .
The MOCVD epitaxial wafers with the same growth structure are used to study and prepare the vertical cavity surface emitting and receiving devices and arrays suitable for monolithic integration with the same transmitting and receiving wavelength and are determined by the resonant cavity mode.The dual current limiting structure is adopted to optimize the series resistance , To improve the electro-optical conversion efficiency, preparation of 980 nm band light-emitting devices and 1 × 16 array chip, the emission line half-width ≤ 4. 8nm, the injection current of 50 m A, the emission power of 0.7m W. Array Chip probe for on-line detection, the device has good light emitting characteristics of the receiving device photoelectric response with good wavelength and spatial selectivity characteristics, the resonant wavelength can be used to accept different angles of light incident to achieve simple adjustment through the top of the device corrosion DBR The method of adjusting the reflectance of the incident mirror can respectively realize the optimization design of the resonant enhancement transmitting and receiving device with a monolithic integrated structure.