基于国内的材料生产和半导体工艺条件,研制了10 Gb/s光电集成(OEIC)光接收机前端,并采用耗尽型赝配高电子迁移晶体管(PHEMT)设计并实现了限幅放大器。光接收机前端组成形式为金属-半导体-金属(MSM)光探测器和电流模跨阻放大器,借助模拟软件SILVACO建立并优化了器件模型,探测器光敏面50μm×50μm,带宽超过10 GHz,电容约3 fF/μm。研究并改进了腐蚀自停止工艺并实际应用于OEIC器件制作,芯片面积为151Iμm×666μm。限幅放大器采用无源电感扩展带宽,并借助三维电磁仿真软件HFSS进行模拟仿真。限幅放大器芯片面积为1950μm×1910μm,在3.125 Gb/s传输速率下,分别输入信号幅度为10和500 mV,可以得到500 mV恒定输出摆幅。 Based on domestic material production and semiconductor process conditions, a 10 Gb / s optoelectronic integrated (OEIC) optical receiver front-end was developed and a limiting amplifier was designed and implemented using a depletion-mode pseudomorphic high electron transfer transistor (PHEMT). The front end of the optical receiver is composed of a metal-semiconductor-metal (MSM) photodetector and a current-mode transimpedance amplifier. The device model is built and optimized with the SILVACO simulation software. The detector has a photo-sensing area of ​​50μm × 50μm and a bandwidth of more than 10GHz. About 3 fF / μm. Research and improve the corrosion self-stop process and the practical application of OEIC device production, the chip area of ​​151Iμm × 666μm. The limiting amplifier uses passive inductance to extend the bandwidth and simulates with the aid of HFSS, a three-dimensional electromagnetic simulation software. Limiting amplifier chip area of ​​1950μm × 1910μm, 3.125 Gb / s transmission rate, respectively, the input signal amplitude of 10 and 500 mV, you can get 500 mV constant output swing.