论文部分内容阅读
基于激光切片原理的分析,给出了厚硅片的高速激光切片方法,采用平凸腔补偿工作物质的热透镜效应,利用Nd∶YAG棒本身的自孔径选模作用,获得了光束质量因子M2等于4.19的50 W 1.064μm激光输出。选取合适的扩束倍数、重复频率和出气孔直径,当切割0.75 mm厚的硅片时,切片速度达400 mm/min;当切割两层叠放的0.75 mm厚的硅片时,切片速度达到100 mm/min。切片的切口光滑,切缝较窄,重复精度高,切片质量好,达到用传统方法难以达到的切片效果。
Based on the analysis of the principle of laser slicing, a high-speed laser slicing method of thick silicon wafer is given. By using the plano-convex cavity to compensate the thermal lens effect of the working substance, the self-aperture mode selection of Nd:YAG rod is used to obtain the beam quality factor M2 A 50 W 1.064 μm laser output equal to 4.19. Select the appropriate beam expander, repetition frequency and outlet diameter, when cutting 0.75 mm thick silicon wafer slicing speed of 400 mm / min; when the two stacked layers of 0.75 mm thick silicon wafer, the slicing speed of 100 mm / min. Slice cut smooth, narrow kerf, repeat high precision, slicing good quality, to achieve the traditional methods difficult to achieve the slicing effect.