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用MOCVD技术在(0001)蓝宝石衬底上成功研制了2寸衬底上无裂纹的Al N/Al0.3Ga0.7N超晶格材料。研究了AlxGa1-xN/Al N超晶格材料特性。结果表明,缓冲层材料和结构对Al N/Al0.3Ga0.7N超晶格的表面型貌和界面特性有很大的影响。AFM研究表明利用GaN做支撑层生长的Al N/Al0.3Ga0.7N超晶格材料是一种准二维生长模式。XRD和SEM研究表明研制的材料表面平整、界面清晰、并且材料具有完整的周期重复性。利用紫外-可见光谱仪反射谱研究表明研制的30对Al N/Al0.3Ga0.7N超晶格材料在中心波长为313nm的紫外波段具有93.5%的反射率。
The crack-free Al N / Al 0.3 Ga 0.7 N superlattice material on a 2-inch substrate has been successfully fabricated on (0001) sapphire substrate by MOCVD. The properties of AlxGa1-xN / AlN superlattice materials have been studied. The results show that the material and structure of the buffer layer have great influence on the surface morphology and interface characteristics of Al N / Al 0.3 Ga 0.7 N superlattice. AFM studies show that AlN / Al 0.3 Ga 0.7 N superlattice materials grown by using GaN as a supporting layer are a quasi-two-dimensional growth mode. XRD and SEM studies show that the developed materials have smooth surface, clear interface and complete cycle repeatability. Reflectance spectroscopy using UV - Vis spectroscopy showed that 30 pairs of AlN / Al0.3Ga0.7N superlattice materials were prepared with a reflectance of 93.5% in the UV wavelength band of 313 nm.