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采用脉冲激光沉积技术在氧气氛中制备了Ｇａ２Ｏ３薄膜。Ｘ射线衍射表明薄膜属于β单斜晶系，薄膜的颗粒在纳米量级；原子力显微镜显示随着氧气压强的增加，薄膜颗粒增大。测定了薄膜的先致发光，发现沉积时氧气压强的增加可以提高纯Ｇａ２Ｏ３薄膜的发光强度，且峰位红移。Ｇａ２Ｏ３靶物质中掺杂少量的ＣｅＯ２后所得到的薄膜，其发光强度可以明显地增加。此外，还利用发光光谱技术研究了由激光烧蚀所产生的羽状物中Ｇａ原子或离子的氧化反应。
Ga2O3 films were prepared by pulsed laser deposition in oxygen atmosphere. X-ray diffraction showed that the film belongs to the β monoclinic system, and the particles of the film are in the order of nanometers. The atomic force microscope shows that the film particles increase with the increase of the oxygen pressure. The pre-luminescence of the film was measured. It was found that the increase of the oxygen pressure during the deposition can increase the luminescence intensity of the pure Ga2O3 film and the red-shift of the peak position. Ga2O3 target material doped with a small amount of CeO2 obtained after the film, the luminous intensity can be significantly increased. In addition, luminescence spectroscopy was also used to study the oxidation of Ga atoms or ions in plumes produced by laser ablation.