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为了研制出高性能的Ｓｉ１－ｘＧｅｘ／Ｓｉ异质结器件，生长出适合器件应用的应变Ｓｉ１－ｘＧｅｘ材料，利用自行研制的超高真空化学气相沉积（ＵＨＶ／ＣＶＤ）设备，研究了Ｓｉ１－ｘＧｅｘ生长速度以及组份随ＧｅＨ４流量的变化规律。实验结果表明：Ｓｉ１－ｘＧｅｘ生长速度随ＧｅＨ４流量明显增加，且外延层中Ｇｅ与Ｓｉ组份的比值约是气相中的ＧｅＨ４与ＳｉＨ４分压比值的２．５倍。提出了一个简单的生长动力学模型，解释了组份与流量的关系。Ｒａｍａｎ谱分析结果表明外延层为完全应变的。利用该材料制作出了性能良好的二极管。
In order to develop a high-performance Si1-xGex / Si heterojunction device and grow a strained Si1-xGex material suitable for the device application, the ultra-high vacuum chemical vapor deposition (UHV / CVD) Growth rate and composition of GeH4 flux changes. The experimental results show that the growth rate of Si1-xGex increases with the flow rate of GeH4, and the ratio of Ge to Si in the epitaxial layer is about 2.5 times of the partial pressure ratio of GeH4 to SiH4 in the gas phase. A simple model of growth kinetics is proposed, explaining the relationship between components and flow rate. Raman spectrum analysis shows that the epitaxial layer is completely strained. Use this material to make a good diode.