用中子嬗变掺杂(NTD)方法制备探测器级N型硅单晶的关键之一是在热处理过程中保持和提高硅单晶的少子寿命。本文介绍用扩散炉退火,采用适当的控温制度,并在保护气氛中加入适当量的HCl,使得硅单晶在热处理后少子寿命达1000μs以上。而且电阻率的均匀性较好。 One of the keys in the preparation of detector grade N-type single crystal by the neutron transmutation doping (NTD) is to maintain and increase the minority carrier lifetime of the silicon single crystal during the heat treatment. This article describes the use of diffusion furnace annealing, the use of appropriate temperature control system, and in the protective atmosphere by adding the appropriate amount of HCl, making the silicon single crystal heat treatment in less than 1000μs life expectancy. And the uniformity of resistivity is better.