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对等离子体增强化学汽相起积（PECVD）法制成SiOxNy薄膜组成的MIS结构样品，由集成测试系统测量Ⅰ－Ⅴ特性，用晶体管特性图示仪测试击穿行为。分析研究了该薄膜的Ⅰ－Ⅴ特性和击穿机理，探讨了膜的击穿电场及其随混合气体比例、反应空气压、衬底工作温度的变化关系。
The MIS structure samples made of SiOxNy thin films were prepared by plasma enhanced chemical vapor deposition (PECVD) method. The characteristics of Ⅰ-Ⅴ were measured by an integrated test system and the breakdown behavior was tested by the transistor characteristic diagram. The Ⅰ-Ⅴ characteristics and breakdown mechanism of the film were analyzed. The breakdown electric field of the film and its relationship with the ratio of mixed gas, reaction air pressure and substrate operating temperature were investigated.