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提出了一种新型的RC-IGBT器件,相比于常规RC-IGBT,新型的RC-IGBT在集电极侧引入了一个类似于栅极的多晶硅沟槽结构,不同之处是沟槽底部结构没有氧化层将多晶硅与硅体区相隔离,于是可将此重掺杂的多晶硅区作为新型的RC-IGBT的集电极的N+短路区,故称为TO-RC-IGBT(Trench oxide reverse conducting IGBT)。由于集电极P+阳极层与N+短路区之间的氧化层隔离,TO-RC-IGBT并未出现常规RC-IGBT导通时的回跳现象。为了避免产生回跳现象,常规RC-IGBT的元胞宽度通常达数百微米,而TO-RC-IGBT元胞宽度只有20μm,因而TO-RC-IGBT不会出现常规RC-IGBT的反向电流分布不均匀的问题。
A new type of RC-IGBT device is proposed. Compared with the conventional RC-IGBT, the new RC-IGBT introduces a gate-like polysilicon trench structure on the collector side, except that the trench bottom structure has no The oxide layer separates the polysilicon from the silicon body region. Therefore, the heavily doped polysilicon region can be regarded as the N + short-circuit region of the collector of the new type RC-IGBT, so it is called Trench oxide reverse conducting (TO-RC-IGBT) . Due to the isolation of the oxide layer between the collector P + anode layer and the N + short-circuit region, the TO-RC-IGBT does not appear to jump back when the conventional RC-IGBT is turned on. To avoid bouncing, conventional RC-IGBTs typically have a cell width of hundreds of micrometers and a TO-RC-IGBT cell width of only 20 μm, so that the conventional RC-IGBT does not exhibit reverse current Uneven distribution of the problem.