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研制成功了采用光伏InSb二极管列阵工艺、直接注入Si CMOS读出电路、微型玻璃杜瓦和微型节流制冷机的 6 4× 6 4元InSb红外焦平面组件。焦平面组件平均探测率约 1× 10 11cmHz1 2 W-1,平均量子效率约 72 %,响应率非均匀性约 18%,无效像元率约 0 .5 %。其性能参数满足红外成像制导的技术要求 ,已成功进行了凝视红外成像探测系统外场试验。
The successful development of the InSb diode array using photovoltaic InSb diode array technology, direct injection Si CMOS readout circuit, micro-glass Dewar and micro throttle chillers 6 4 × 6 4 InSb Infrared Focal Plane components. The average detection rate of the focal plane module is about 1 × 10 11 cmHz 1 2 W -1, the average quantum efficiency is about 72%, the response rate is about 18%, and the null pixel rate is about 0.5%. Its performance parameters to meet the technical requirements of infrared imaging guidance, has successfully conducted a staring infrared imaging detection system field test.