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采用变分法研究了半无限纤锌矿氮化物半导体中电子表面态问题.计及电子与表面光学声子相互作用和结构异性的影响导出了系统的有效哈密顿量,获得了电子表面态能级、电子与表面光学声子相互作用能量分别随表面势垒的变化关系.对GaN,AlN和InN进行了数值计算.结果表明,电子与表面声子的相互作用使电子的表面能级下降,并且纤锌矿结构的GaN和AlN中电子-声子相互作用能量较闪锌矿结构大,而对InN情况正好相反.在计算的所有材料中纤锌矿材料的电子表面能级比闪锌矿的低几百meV.电子与表面光学声子相互作用对表面电子态的影响不应被忽略.
The variational method is used to study the electronic surface states of semi-infinite wurtzite nitride semiconductors. Taking into account the influence of phonon interaction and structural anisotropy on electrons and surface optics, the effective Hamiltonian of the system is derived, and the electronic surface state energy The results show that the interaction between electron and surface phonon decreases the surface energy level of electron, and the interaction between electron and surface phonon interact with surface potential barrier. And the electron-phonon interaction energies in the wurtzite GaN and AlN are larger than those of the sphalerite structure, but inversely for InN In all the calculated materials, the wurtzite material has an electron surface level higher than that of the sphalerite Of the low hundreds of meV electron and surface optical phonon interaction on the surface electronic state should not be ignored.