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本器件始于60年代,由于结构上的问题,至今未获成功.本文对该器件提出了根本改进,采用砷化镓单晶结构.分析表明,最高振荡频率有可能达到300GHZ.
Since the 1960s, the device has been unsuccessful due to structural problems.This paper presents a fundamental improvement of the device using a gallium arsenide single crystal structure.It is shown that the maximum oscillation frequency is likely to reach 300GHZ.