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采用ICP刻蚀(inductively coupled plasma etching)工艺制备了深台面n-on-p结构的可响应到2.4μm的延伸波长8×1元线列In Ga As探测器.器件表面采用ICP源激发的N2等离子体进行处理,然后再使用ICPCVD(inductively coupled plasma chemical vapor deposition)沉积一层Si Nx薄膜的钝化工艺.不同面积光敏元器件的电流—电压特性分析显示器件在常温和低温下侧面电流均得到有效抑制,激活能分析显示了器件优异的暗电流特性,在-10 m V偏压下,在200 K和300 K温度下暗电流密度分别为94.2 n A/cm2和5.5×10-4A/cm2.
ICP-Induced InGaAs detectors with an extended wavelength of 8 × 1 were fabricated by inductively coupled plasma etching (ICP-ICP). The ICP Plasma, and then passivation process of depositing a layer of Si Nx thin film by using ICPCVD (inductively coupled plasma chemical vapor deposition) .According to the current-voltage characteristic analysis of different area photosensitive elements, the side current of the device at normal temperature and low temperature The effective inhibition, activation energy analysis shows the device’s excellent dark current characteristics with dark current densities of 94.2 nA / cm2 and 5.5 × 10-4 A / cm2 at a temperature of 200 K and 300 K at -10 mV bias .