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利用脉冲激光沉积法在石英衬底上制备出了可见光透过率高、电阻率极低的Ga,Mo共掺杂ITO基InSnGaMo复合氧化物薄膜。研究了衬底温度对薄膜结构、表面形貌、光电性能的影响。实验结果表明:衬底温度对InSnGaMo复合氧化物薄膜形貌、光电性能均有很大影响。X射线衍射、扫描电镜和霍尔测试结果表明,随着衬底温度的升高,薄膜晶粒度增大,电阻率快速下降,可见光平均透过率明显提高。当衬底温度为450℃时,InSnGaMo复合氧化物薄膜的电阻率最低为4.15×10-4Ω.cm,载流子浓度和迁移率最大分别为3×1020cm-3,45 cm2V-1s-1,在可见及近红外区平均透过率达92%,特别地,波长为362 nm时,最高透射率可达99%。
The Ga-Mo co-doped ITO-based InSnGaMo composite oxide thin films with high visible light transmittance and low resistivity were prepared on quartz substrates by pulsed laser deposition. The effects of substrate temperature on the structure, surface morphology and photoelectric properties of the films were investigated. The experimental results show that the substrate temperature has a great influence on the morphology and optical properties of InSnGaMo composite oxide films. X-ray diffraction, scanning electron microscopy and Hall test results show that with the substrate temperature increases, the grain size increases, the resistivity decreased rapidly, the average visible light transmittance was significantly improved. When the substrate temperature is 450 ℃, the resistivity of InSnGaMo composite oxide film is 4.15 × 10-4Ω · cm, the maximum carrier concentration and mobility are 3 × 1020cm-3,45 cm2V-1s-1, The average transmittance in the visible and near-infrared range is 92%. In particular, the maximum transmittance is 99% at 362 nm.