南京电子器件研究所研制成功 L波段脉冲输出 36 0 W硅功率晶体管。该器件在 1 .4GHz、脉宽 2 0 μs、占空比 5 %条件下 ,脉冲输出功率 36 0 W,功率增益 7.8d B,效率大于 5 0 %。L波段大功率器件在雷达、卫星遥测等领域有广泛应用。由于这种器件工作频率高、输出功率大、增益高 Nanjing Electronic Devices Institute successfully developed L band pulse output 36 0 W silicon power transistor. The device has a pulse output of 36 0 W, a power gain of 7.8d B, and an efficiency of more than 50% at 1 .4GHz with pulse width of 20 μs and duty ratio of 5%. L-band high-power devices in radar, satellite telemetry and other fields have a wide range of applications. Due to the high frequency of this device, the output power, high gain