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文章论述了AlGaN/GaN高电子迁移率晶体管(HEMT)在微波功率领域应用的优势,详细介绍了微波功率AlGaN/GaNHEMT的工艺进展以及器件的直流和频率特性,评述了其最新进展及今后发展方向。
In this paper, the advantages of AlGaN / GaN high electron mobility transistor (HEMT) in the field of microwave power are discussed. The progress of microwave power AlGaN / GaNHEMT and DC and frequency characteristics of the device are introduced in detail. The latest development and future development of AlGaN / .