研究了不同响应波长的HgCdTe器件在不同背景辐射条件下的噪声变化。随着背景辐射的增加,甚长波器件的噪声减小,而中波器件相反。噪声频谱测量表明,产生-复合噪声分量和1/f噪声分量是器件的主要噪声来源,并且这两个分量随背景的变化趋势相同。非平衡载流子和器件有效寿命的理论分析,表明器件噪声随背景辐射的变化存在一个极大值,而中波和甚长波器件处在不同的作用区域内,接受到的背景辐射对载流子浓度和器件有效寿命的影响不同,从而噪声变化表现不同。在此基础上,提出了“临界背景通量密度”的概念。 The noise changes of HgCdTe devices with different response wavelengths under different background radiation conditions were studied. As the background radiation increases, the noise of very long-wavelength devices decreases while that of the middle-wavelength devices is the opposite. The noise spectrum measurements show that the generated-composite noise component and the 1 / f noise component are the main sources of noise for the device, and the trend of these two components is the same with the background. The theoretical analysis of the effective lifetime of non-equilibrium carriers and devices shows that there is a maximum value of the device noise with the change of the background radiation. However, the medium-wave and very long-wavelength devices are in different action areas. The received background radiation affects the current carrying The effects of the sub-concentration and the effective life of the device are different, so that the noise changes differently. On this basis, the concept of “critical background flux density” is proposed.