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研究了亚微米聚焦离子束（FIB）系统的漂移现象，给出了测量漂移的方法，分析引起漂移的原因及降低漂移的措施。发现了偏转电极上钝化层及污染物充电电荷所引起的漂移现象；测出了各电极电压变化所引起漂移的大小；发现了由于外壳温度不均匀引起离子枪轴线相对样品变化所引起的漂移。提出了制作透镜电极时保持轴对称、特别是限制光栏必须位于透镜光轴上的必要性。所给出的漂移数据既包含早期曾研制的单级透镜FIB系统的数据，也包含近期研制的二级透镜可变束流FIB系统的数据。
The drift phenomenon of submicron focused ion beam (FIB) system is studied. The method to measure drift, the reason of drift and the measure to reduce the drift are given. The drift caused by the passivation layer and the charge of the pollutant on the deflection electrode was found; the drift caused by the voltage change of each electrode was measured; and the drift caused by the relative sample axis change of the ion gun was found due to the uneven temperature of the shell . It is proposed that it is necessary to maintain the axis symmetry when manufacturing the lens electrode, especially to limit the light beam to be located on the optical axis of the lens. The drift data presented includes both single-stage FIB system data developed earlier and data from a recently developed two-stage variable beam FIB system.