纳米级自开关二极管是一种通过破坏器件表面对称性来实现整流特性的纳米级新型晶体管。首先通过建立In0.53Ga0.47As/In0.52Al0.48As纳米级自开关二极管的二维器件模型,采用蒙特卡罗方法,模拟了自开关器件的电子输运特性,根据该器件模型研究了在不同几何结构参数条件下的自开关器件的电学特性,并对影响器件电学特性的结构参数进行了仿真分析。结果表明,器件的I-V特性强烈地受到导电沟道宽度、沟槽宽度、沟道长度和表面态密度的影响,通过优化器件的结构参数可使器件获得更优越的整流特性。 Nanoscale self-switching diodes are a new type of nano-transistor that achieves rectification by destroying the device's surface symmetry. First of all, by establishing a two-dimensional device model of In0.53Ga0.47As / In0.52Al0.48As nanoscale self-switching diode and using Monte Carlo method to simulate the electron transport characteristics of the self-switching device, The geometric characteristics of the self-switching device under the conditions of electrical properties, and structural parameters that affect the electrical properties of the device were simulated. The results show that the I-V characteristics of the device are strongly affected by the channel width, channel width, channel length and surface state density. The device can obtain superior rectification characteristics by optimizing the structural parameters of the device.