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探测器采用50周期GaAs/Al_(0.3)Ga_(0.7)As多量子阱结构的分子束外延材料,并制成直径为320μm的台面型式单管.其器件主要性能和指标如下:探测峰值波长为 9.2 μm,工作温度为77 K,峰值电压响应率 R_v= 9.7× 10~5V/W,峰值探测率 D~*= 6.2 × 10~(10)cmHz~(1/2)/W.
The detector is made of molecular beam epitaxy with a 50-cycle GaAs / Al 0.3 Ga 0.7 As quantum well structure and is fabricated into a mesa-type single tube with a diameter of 320 m. The main performance and indicators of the device are as follows: 9.2 μm, working temperature 77 K, peak voltage response R_v = 9.7 × 10 ~ 5V / W and peak detection rate D ~ * = 6.2 × 10 ~ (10) cmHz ~ (1/2) / W.