High content anion (S/Se/P) doping assisted by defect engineering with fast charge transfer kinetics

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The rate-determining process for sodium storage in TiO2 is greatly depending on charge transfer happen-ing in the electrode materials owing to its inferior diffusion coefficient and electronic conductivity.Apart from reducing the diffusion distance of ion/electron,the increasement of ionic/electronic mobility in the crystal lattice is also very important for charge transport.Here,an oxygen vacancy (OV) engineering assisted in high-content anion (S/Se/P) doping strategy to enhance charge transfer kinetics for ultrafast sodium-storage performance is proposed.Theoretical calculations indicate that OV-engineering evokes spontaneous S doping into the TiO2 phase and achieves high dopant concentration to bring about impu-rity state electron donor and electronic delocalization over S occupied sites,which can largely reduce the migration barrier of Na+.To realize the speculation,high-content anion doped anatase TiO2/C composites(9.82 at% for S in A-TiO2-x-S/C) are elaborately designed.The optimized A-TiO2-x-S/C anode exhibits extraordinarily high-rate capability with 209.6 mAh g-1 at 5000 mA g-1.The assembled sodium ion capacitors deliver an ultrahigh energy density of 150.1 Wh kg-1 at a power density of 150 W kg-1 when applied as anode materials.This work provides a new strategy to realize high content anion doping con-centration,and enhances the charge transfer kinetics for TiO2,which delivers an efficient approach for the design of electrode materials with fast kinetic.
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