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ＩＧＣＴ 集成门极换向晶闸管是由在ＧＴＯ 结构里引入了缓冲层（ｐｉｎ）、可穿透发射区结构、反并联续流快恢复二极管而形成的门极换向晶闸管ＧＣＴ 和硬门极驱动电路集成在一起的一种新器件。它具有晶闸管的高电压、大电流、低导通损耗和ＩＧＢＴ（绝缘栅双极晶体管） 的关断均匀、开关速度高的优点。目前已用于电压等级为２－３ｋＶ、３－３ｋＶ、４－１６ｋＶ、６－９ｋＶ，功率范围为０－５～１００ ＭＶＡ 的装置中。它是一种理想的大功率电力半导体器件。
IGCT integrated gate commutated thyristor is a gate commutated thyristor GCT and a hard gate drive circuit formed by introducing a pin in the GTO structure, penetrating the emitter structure, and anti-parallel freewheeling fast recovery diode A new device integrated. It has the thyristor high voltage, high current, low conduction loss and IGBT (insulated gate bipolar transistor) turn-off, the advantages of high switching speed. Has been used for the voltage level of 2-3kV, 3-3kV, 4-16kV, 6-9kV, the power range of 0-5 ~ 100 MVA device. It is an ideal high-power power semiconductor device.