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化学机械抛光(Chemical-Mechanical Polishing, 简称 CMP)是目前提供全局平面化最理想的技术, 在超精密表面加工领域得到了大量研究和应用. 概述了超大规模集成电路(Ultra-large Scale Integration, 简称ULSI)多层布线中硅片、介电层和金属材料以及磁头/硬盘片化学机械抛光材料去除机理的研究现状和发展趋势, 重点评述了化学机械抛光过程中抛光液研磨颗粒与抛光片表面间相互作用机制, 并提出了材料去除机理的研究方法.
Chemical-Mechanical Polishing (CMP) is the most ideal technology for providing global planarization, and has been widely studied and applied in the field of ultra-precision surface processing.It is summarized that Ultra-large Scale Integration ULSI) research status and development trend of removing mechanism of chemical mechanical polishing material of silicon wafer, dielectric layer and metal material and magnetic head / hard disk in multi-layer wiring, especially the chemical mechanical polishing process is discussed. Interaction mechanism, and put forward the research methods of material removal mechanism.