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分别用 ＸＰＳ和 ＡＥＳ分析了ＩＴＯ薄膜真空退火前后各元素化学状态的变化和深度分布情况．研究表明，退火前后Ｓｎ和Ｉｎ处于各自相同的化学状态中．Ｏ以氧充足和氧缺乏两种化合状态存在，其结合能值分别为（５２９．９０±０．３０）ｅＶ和（５３１．４０±０．２０）ｅＶ．氧缺位状态主要分布在薄膜表层各元素在薄膜体内分布均匀而在膜基界面存在金属富集
The changes of chemical state and depth distribution of each element before and after vacuum annealing were analyzed by XPS and AES respectively. Studies have shown that Sn and In are in the same chemical state before and after annealing. O is present in both oxygenated and oxygen deficient states with binding energies of (529.90 ± 0.30) eV and (531.40 ± 0.20) eV, respectively. Oxygen vacancy state is mainly distributed in the film surface of the elements in the film distribution in the body and the film-based interface metal enrichment