论文部分内容阅读
基于小电流下肖特基结正向压降的温度特性,建立了温升测量系统。利用该系统对肖特基SiC二极管的瞬态温升进行了测量,结果显示瞬态温升曲线呈阶梯状变化。利用结构函数的方法对瞬态温升曲线进行处理,分析了肖特基SiC二极管在热流传输路径上的热阻构成。研究了三引脚封装的肖特基SiC二极管在相同大功率的条件下,两正极引脚单独使用和并联使用时的热阻特性,结果显示,在两正极引脚并联使用时,其热阻比单独作用时减少一半,这表明三引脚封装的肖特基SiC二极管的两个正极是并联的,并共用一个负极和散热片。
Based on the temperature characteristics of the forward voltage drop of Schottky junction under low current, a temperature rise measurement system was established. The system was used to measure the transient temperature rise of Schottky SiC diode. The results show that the transient temperature rise curve changes stepwise. The transient temperature rise curve is processed by using the structure function method, and the thermal resistance of the Schottky SiC diode in the heat flow transmission path is analyzed. The thermal resistance characteristics of Schottky SiC diodes in three-lead package under the same high power conditions were studied. The results showed that the thermal resistance of the two positive pins when used in parallel with the two positive pins Which is reduced by half when compared with the single acting. This indicates that the two positive electrodes of the three-pin Schottky SiC diode are connected in parallel and share a negative electrode and a heat sink.