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基于三维时域有限差分法,对半径为5μm的径向直连波导微腔激光器的模式及定向输出特性进行研究,得到了波长在1550nm附近的高品质因子(Q)横电模的Q值与光场分布特性。基于半导体平面加工工艺制备了AlGaInAs/InP圆盘形微腔激光器,微腔半径为5μm,波导宽度为1μm。该激光器在298K下实现了连续单模输出,阈值电流为4mA。在注入电流为9mA时,激光器的边模抑制比可达33.4dB。基于速率方程拟合了激光器模式强度随注入电流的变化,得到激光器的自发辐射因子约为5.5×10~(-3)。
Based on the three-dimensional finite difference time-domain method, the mode and directional output characteristics of a radial direct-coupled waveguide micro-cavity laser with a radius of 5μm were studied. The Q value of high quality factor (Q) Light field distribution characteristics. AlGaInAs / InP disk-shaped microcavity laser was fabricated based on semiconductor planar processing. The microcavity radius was 5μm and the waveguide width was 1μm. The laser at 298K to achieve a continuous single-mode output, the threshold current of 4mA. When the injection current is 9mA, the side mode suppression ratio of the laser can reach 33.4dB. Based on the rate equation, the intensity of the laser mode is fitted with the change of the injection current. The spontaneous emission factor of the laser is about 5.5 × 10 ~ (-3).