The effects of N+ implantation under various conditions on CVD diamond films were analyzed with Raman spectroscopy, four-point probe method, X-ray diffraction (XRD), Rutherford backseattering spectroscopy (RBS), ultraviolet photoluminescence spectroscopy (UV-PL), Fourier transformation infrared absorption spectroscopy (FTIR) and X-ray photoelectron spectroscopy (XPS). The results show that the N+ implantation doping without any graphitization has been successfully realized when 100 keV N+ ions at a dosage of 2 × 1016 cm-2 were implanted into diamond films at 550℃ . UV-PL spectra indicate that the implanted N+ ions formed an electrically inactive deep-level impurity in diamond films. So the sheet resistance of the sample after N+ implantation changed little. Carbon nitride containing C≡N covalent bond has been successfully synthesized by 100 keV, 1.2×1018 N/cm2 N+ implantation into diamond films. Most of the implanted N+ ions formed C≡N covalent bonds with C atoms. The others were free state nitroge The effects of N + implantation under various conditions on CVD diamond films were analyzed with Raman spectroscopy, four-point probe method, X-ray diffraction (XRD), Rutherford backseattering spectroscopy (RBS), ultraviolet photoluminescence spectroscopy (UV- PL) Infrared absorption spectroscopy (FTIR) and X-ray photoelectron spectroscopy (XPS). The results show that the N + implantation doping without any graphitization has been successfully realized when 100 keV N + ions at a dosage of 2 × 10 16 cm-2 were implanted into diamond Films at 550 ° C. UV-PL spectra indicate that the implanted N + ions formed an electrically inactive deep-level impurity in diamond films. So the sheet resistance of the sample after N + implantation changed little. Carbon nitride containing C≡N covalent bond has been Most synthesized by 100 keV, 1.2 × 1018 N / cm2 N + implantation into diamond films. Most of the implanted N + ions formed C≡N covalent bonds with C atoms. The others we re free state nitroge