在用电感耦合高频等离子体光谱法测定超纯水中金属杂质的基础上,试验将这一方法扩大应用到痕量硅和硼的测定,便可在一次操作过程中,同时测定金属和非金属杂质,避免了繁琐冗长的化学操作.本法简便快速,空白值低,在取样量为50毫升时,测定下限可低至ppb至0.1ppb,相对标准偏差在5%以内,较好地满足了半导体工艺中超纯水的分析要求. Based on the determination of metal impurities in ultrapure water by inductively coupled high-frequency plasma spectroscopy, this method is extended to the determination of trace amounts of silicon and boron by the test, and the simultaneous determination of metals and Non-metallic impurities, to avoid the cumbersome and lengthy chemical operations.This method is simple and fast, the blank value is low, the sample volume of 50 ml, the lower limit of determination can be as low as ppb to 0.1ppb, the relative standard deviation of less than 5%, better Meet the semiconductor technology in the analysis of ultrapure water requirements.