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以金属有机螯合物为源物质,采用低压等离子体化学气相淀积工艺(PCVD),成功地生长了 Y_2O_3稳定的 ZrO_3氧离子导体薄膜,对薄膜的化学组成、结构以及电导性能进行了研究。通过实验测量了等离子体条件下不同淀积参数对淀积速率的影响,探讨了各种参数对淀积过程的控制作用,进而为改进化学气相淀积工艺提供依据。
The chemical composition, structure and conductivity of Y2O3 stabilized ZrO2 thin films were successfully grown by low pressure plasma chemical vapor deposition (PCVD) using metal organic chelate as the source material. The effect of different deposition parameters on the deposition rate under plasma condition was experimentally measured, and the control effect of various parameters on the deposition process was discussed, which provided the basis for improving the chemical vapor deposition process.