论文部分内容阅读
本工作是在电子显微镜内原位加热的同时,观察α-Pd_(80)Si_(20)的氧化过程及其对晶化的影响。用双喷制备的试样安装在JEM-200CX电子显微镜的加热台上,以不同的速度进行加热,并对氧化过程进行原位观察。试样室的真空度保持在～10~(-5)Pa,然后将原位观察过的试样,在Auger谱仪中用Ar~+离子对试样表面逐层剥离,以分析成分随深度的变化。为了对比,试样也在Auger谱仪中(真空度～10~(-7)Pa)进行加热,观察表面层成分随温度的变化。
This work is to observe the oxidation of α-Pd_ (80) Si_ (20) and its effect on the crystallization while heating in situ in the electron microscope. Specimens prepared by double jet were mounted on a heating table of a JEM-200CX electron microscope, heated at different speeds, and the oxidation process was observed in situ. The degree of vacuum in the sample chamber is maintained at ~ 10 ~ (-5) Pa, and then the in-situ observed sample is peeled off from the surface of the sample layer by Ar ~ + ion in an Auger spectrometer to analyze the change of composition with depth The change. For comparison, the sample was also heated in an Auger spectrometer (vacuum ~ 10 ~ (-7) Pa) to observe the change of composition of the surface layer with temperature.